august 2005 1/9 9 features very low collector to emitter saturation voltage d.c. current gaing, h fe > 100 5 a continuous collector current sot-223 plastic package for surface mounting circuits available in tape & reel packing in compliance with the 2002/93/ec european directive applications power management in portable equipment voltage regulation in bias supply circuits switching regulator in battery charger applications heavy load driver description the device is manufactured in low voltage pnp planar technology by using a ?base island? layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. order codes internal schematic diagram sot-223 1 2 2 3 part number marking package packing STN888 n888 sot-223 tape & reel STN888 high current, high performance, low voltage pnp transistor www.st.com rev.2
1 absolute maximum ratings STN888 2/9 1 absolute maximum ratings table 1. absolute maximum rating table 2. thermal data symbol parameter value unit v cbo collector-base voltage (i e = 0) -45 v v ceo collector-emitter voltage (i b = 0) -30 v v ebo emitter-base voltage (i c = 0) -6 v i c collector current -5 a i cm collector peak current (t p < 5ms) -10 a p tot total dissipation at t c = 25c 1.6 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-amb thermal resistance junction-ambient __________________ max 78 c/w
STN888 2 electrical characteristics 3/9 2 electrical characteristics (t case = 25c; unless otherwise specified) table 3. electrical characteristics note: 1 pulsed duration = 300 s, duty cycle 1.5%. symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = -30v v cb = -30v ____ t c = 100c -10 -100 a a i ebo emitter cut-off current (i c = 0) v eb = -6v -10 a v (br)ceo note: 1 collector-emitter breakdown voltage (i b = 0) i c = -10ma -30 v v (br)cbo collector-base breakdown voltage (i e = 0) i c = -100 a -45 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -100 a -6 v v ce(sat) note: 1 collector-emitter saturation voltage i c = -500ma _____ i b = -5ma i c = -2a _____ i b = -50ma i c = -5a _____ i b = -250ma i c = -6a _ ____ i b = -250ma i c = -8a _____ i b = -400ma i c = -10a ___ __ i b = -500ma -0.7 -1.0 -1.2 -0.15 -0.35 -0.70 v v v v v v v be(sat) note: 1 base-emitter saturation voltage i c = -2a ____ i b = -50ma i c = -6a ____ i b = -250ma -1.2 -1.1 v v h fe note: 1 dc current gain i c = -10ma v ce = -1 v 120 200 i c = -500ma v ce = -1 v 100 200 300 i c = -5 a v ce = -1 v 70 100 i c = -5 a v ce = -1 v t j = 100c 100 i c = -8 a v ce = -1 v 55 i c = -10 a v ce = -1 v 35 t d t r t s t f inductive load delay time rise time storage time fall time i c = -3a ____ _ v cc = -20v i b1 = -i b2 =-60ma (see figure 7) 180 160 250 80 220 210 300 100 ns ns ns ns
2 electrical characteristics STN888 4/9 2.1 typical characteristics figure 1. dc current gain figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. switching times resistive load figure 6. switching times resistive load
STN888 3 test circuits 5/9 3 test circuits figure 7. resistive load switching test circuit 1) fast electronic switching 2) non-inductive resisitor
4 package mechanical data STN888 6/9 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STN888 4 package mechanical data 7/9 dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
5 revision history STN888 8/9 5 revision history date revision changes 03-aug-2005 1 initial release.
STN888 5 revision history 9/9 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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